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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

Zhiqiang Li

Springer
Collection: Springer Theses
Publication date : 2016-03-24

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This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600? and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10-7O•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.

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About the book

Author

Zhiqiang Li

Imprint

Springer

Collection

Springer Theses

Publication date

2016-03-24

Pages

59 pages

Print ISBN

9783662496817

Language

English

Ebook informations

EAN EPUB

9783662496831

Price

£44.99

Copy count 0

Print count 5

File size 1362 Ko

Informations accessibility

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About author(s)

Zhiqiang Li

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