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Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors

Farzan Jazaeri, Jean-Michel Sallese

Cambridge University Press
Publication date : 2018-03-01

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The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models for double-gate and nanowire configurations, before offering a general introduction to the EPFL charge-based model of junctionless FETs. Important features are introduced gradually, including nanowire versus double-gate equivalence, technological design space, junctionless FET performances, short channel effects, transcapacitances, asymmetric operation, thermal noise, interface traps, and the junction FET. Additional features compatible with biosensor applications are also discussed. This is a valuable resource for students and researchers looking to understand more about this new and fast developing field.

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About the book

Author

Farzan Jazaeri , Jean-Michel Sallese

Imprint

Cambridge University Press

Collection

n.c

Publication date

2018-03-01

Pages

n.c

Print ISBN

9781107162044

Language

English

Ebook informations

EAN PDF

9781108557535

Price

£141.37

Copy count 0

Print count 0

File size 31549 Ko

Informations accessibility

EAN EPUB

9781108581394

Price

£141.37

Copy count 0

Print count 0

File size 31252 Ko

Informations accessibility

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About author(s)

Farzan Jazaeri

Jean-Michel Sallese

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